RN2102 带阻尼PNP三极管 -50V -100mA/-0.1A 50 0.1W/100mW SOT-523/SC-75/SSM 标记YB 开关电路,逆变器,接口电路,驱动电路
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
电阻比(R1/R2) Resistance Ratio | 1 |
直流电流增益hFE DC Current Gain(hFE) | 50 |
截止频率fT Transtion Frequency(fT) | 200MHz |
耗散功率Pc Power Dissipation | 0.1W/100mW |
Description & Applications | Features • Transistor Silicon PNP Epitaxial Type (PCT Process) • Built-in bias resistors • Simplified circuit design • Fewer parts and simplified manufacturing process • Complementary to RN1101~RN1106 Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
描述与应用 | 特点 •晶体管的硅PNP外延型(PCT工艺) •内置偏置电阻 •简化电路设计更少的部件和简化制造工艺 •互补RN1101~~ RN1106 应用 •开关,逆变电路,接口电路和驱动器电路应用 |
规格书PDF |