RSQ045N03 N沟道MOSFET 30V 4.5A SOT-163/TSMT6/SOT23-6 marking/标记 QL
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 4.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 56mΩ@ VGS =4V, ID =4.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1~2.5V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | 4V Drive Nch MOS FET Features 1) Low On-resistance. 2) Space saving, small surface mount package . 3) Low voltage drive Applications Switching |
| 描述与应用 | 4V驱动N沟道MOS FET 特点 1）低导通电阻。 2）节省空间，小的表面贴装封装。 3）低电压驱动 应用 开关 |
| 规格书PDF |
