RTL030P02 P沟道MOS场效应管 -20V 3A 0.050ohm SOT-363 marking/标记 WN 低导通电阻 超高速开关 低驱动电压
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.050Ω @-3A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.7--2.0V |
| 耗散功率PdPower Dissipation | 1W |
| Description & Applications | Features Low on-resistance. (570mΩ at 2.5V) High power package. High speed switching. Low voltage drive. (2.5V) |
| 描述与应用 | 低导通电阻。 （570mΩ在2.5V） 高功率封装。 高速开关。 低电压驱动 |
| 规格书PDF |
