SI2302DS N沟道MOSFET 20V 2.8A SOT-23/SC-59 marking/标记 A2 低导通电阻/低电压驱动
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 2.8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.115Ω/Ohm @3.1A,2.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.65V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | N-Channel 1.25-W, 2.5-V MOSFET |
| 描述与应用 | N沟道1.25-W， 2.5 V MOSFET |
| 规格书PDF |
