SI3900DV 复合场效应管 20V 2A SOT-163/SOT23-6/TSOP-6 marking/标记 OOL
| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 200mΩ@ VGS =2.5V, ID =1A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6V |
| 耗散功率PdPower Dissipation | 830mW/0.83W |
| Description & Applications | Dual N-Channel 20-V (D-S) MOSFET |
| 描述与应用 | 双N沟道 20-V（D-S）的MOSFET |
| 规格书PDF |
