SI5904DC-T1-E3 复合场效应管 20V 3.1A 1206-8/vs-8 marking/标记 CB5AA 功率MOSFET
| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 3.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 143mΩ@ VGS =2.5V, ID =2.3A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.5V |
| 耗散功率PdPower Dissipation | 1.1W |
| Description & Applications | Dual N-Channel 2.5-V (G-S) MOSFET FEATURES Trench FET Power MOSFET 2.5-V Rated |
| 描述与应用 | 双N沟道2.5-V（G-S）的MOSFET 特点 沟槽FET功率MOSFET 2.5 V额定 |
| 规格书PDF |
