SN7002E6327 N沟道MOSFET 60V 190mA/0.19A SOT-523 marking/标记 Sn 低导通电阻/低电压驱动/高速开关
最大源漏极电压Vds Drain-Source Voltage | 60V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 14V |
最大漏极电流Id Drain Current | 190mA/0.19A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.5Ω/Ohm @100mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.8-2V |
耗散功率Pd Power Dissipation | 360mW/0.36W |
Description & Applications | SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V |
描述与应用 | SIPMOS®小信号晶体管 •N通道 •增强模式 •逻辑电平 •VGS(TH)=0.8 |
规格书PDF |