SSM6K07FU N沟道MOSFET 30V 1.5A SOT-363/SC70-6/TSSOP6/SC-88/US6 marking/标记 KDE 高速开关/低导通电阻/低栅极阈值电压
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 1.5A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.13Ω/Ohm @750mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.1-1.8V |
耗散功率Pd Power Dissipation | 300mW/0.3W |
Description & Applications | DC-DC Converters High Speed Switching Applications Small package Low on resistance : Ron = 130 mΩ max (@VGS = 10 V) Ron = 220 mΩ max (@VGS = 4 V) Low input capacitance : Ciss = 102 pF typ. Crss = 22 pF typ. |
描述与应用 | 高速开关应用 小型封装 低导通电阻RON =130mΩ最大(@ VGS= 10V) RON =220mΩ最大(@ VGS=4 V) 低输入电容:西斯=102 pF(典型值)。 反向传输电容=22 pF(典型值) |
规格书PDF |