SSM6L12TU 复合场效应管 30V/-20V 500mA/-500mA SOT-363/SC70-6/UF6 marking/标记 K9 高速开关
最大源漏极电压VdsDrain-Source Voltage | 30V/-20V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 12V/12V |
最大漏极电流IdDrain Current | 500mA/-500mA |
源漏极导通电阻RdsDrain-Source On-State Resistance | 145mΩ@ VGS = 4.5V, ID = 500mA/ 260mΩ@ VGS = -4V, ID = -250mA |
开启电压Vgs(th)Gate-Source Threshold Voltage | 0.5~1.1V/-0.5~-1.1V |
耗散功率PdPower Dissipation | 500mW/0.5W |
Description & Applications | TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type High-Speed Switching Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS(ON) = 180mΩ (max) (@VGS = 2.5 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V) |
描述与应用 | 东芝场效应晶体管的硅P/ N沟道MOS类型 高速开关应用 •最适用于高密度安装在小包装 •低导通电阻Q1:RDS(ON)=180mΩ(最大)(@ VGS=2.5 V) Q2:RDS(ON)=430mΩ(最大)(@ VGS=-2.5 V) |
规格书PDF |