SST112 N沟道结型场效应管 35v 5mA SOT-23 marking/标记 C2P 低漏电流：20 pA
| 最大源漏极电压VdsDrain-Source Voltage | 35v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -35v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 5ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -1~-5v |
| 耗散功率PdPower Dissipation | 350mW/0.35W |
| Description & Applications | •N–Channel JFETs •Low On-Resistance: J108 <8 •Fast Switching—tON: 4 ns •Low Leakage: 20 pA •Low Capacitance: 11 pF •Low Insertion Loss |
| 描述与应用 | •N沟道JFETs •低导通电阻：J108<8 •快速开关吨：4纳秒 •低漏电流：20 pA的 •低电容：11 pF的 •低插入损耗 |
| 规格书PDF |
