STB36NF03LT4 N沟道MOSFET 30V 3.6A TO-263 marking/标记 B36NF03L 高速开关/低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.020Ω/Ohm @1.6A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.5V |
| 耗散功率Pd Power Dissipation | 75W |
| Description & Applications | TYPICAL RDS(on) = 0.015 Ω TYPICAL Qg = 18 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED |
| 描述与应用 | 典型的RDS（on）= 0.015Ω 典型的Qg=18 NC@ 10V 最优的RDS（on）×QG权衡 减少传导损耗 减少开关损耗 |
| 规格书PDF |
