TM2301N P沟道MOS场效应管 -20V -2.3A 0.095ohm SOT-23 marking/标记 T21
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -2.3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.095Ω @-2.8A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45V |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | Features Advanced trench process technology High density cell design for ultra low on-resistance |
| 描述与应用 | 先进沟道工艺技术 高密度电池设计超低导通电阻 |
| 规格书PDF |
