TP0610T-T1 P沟道MOS场效应管 -60V -180mA 10ohm SOT-23 marking/标记 TO 高速开关 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 30V |
| 最大漏极电流IdDrain Current | -180mA/-0.18A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 10Ω @-500mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.9--2.4V |
| 耗散功率PdPower Dissipation | 800mW/0.8W |
| Description & Applications | High-Side Switching Low On-Resistance: 8 Low Threshold: −1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 Pf |
| 描述与应用 | 高边开关 低导通电阻：8？ 低阈值：-1.9 V 开关速度快：16纳秒 低输入电容：15 pF的 |
| 规格书PDF |
