TP2105K1 P沟道MOS场效应管 -50V -160mA 6ohm SOT-23 marking/标记 P1LB 无二次击穿 高输入阻抗 高增益
| 最大源漏极电压VdsDrain-Source Voltage | -50V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -160mA/-0.16A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 6Ω @-500mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--2.0V |
| 耗散功率PdPower Dissipation | 360mW/0.36W |
| Description & Applications | Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices |
| 描述与应用 | 无二次击穿 低功率驱动器的要求 易于并联 低连续供墨系统和快速开关速度 优良的热稳定性 积分源漏二极管 高输入阻抗，高增益 互补N和P沟道器件 |
| 规格书PDF |
