TPC6003 N沟道MOSFET 30V 6A SOT-163/SOT23-6/VS-6 marking/标记 S2D 高速开关/低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.024Ω/Ohm @3A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3-2.5V |
| 耗散功率Pd Power Dissipation | 2.2W |
| Description & Applications | Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) |
| 描述与应用 | 笔记本电脑应用 便携式设备的应用 低漏源导通电阻RDS（ON）= 19mΩ（典型值） 高正向转移导纳：| YFS|=7 S（典型值） 低漏电流：IDSS= 10μA（最大值）（VDS= 30 V） 增强模型：VTH =1.3〜2.5 V（VDS=10 V，ID= 1毫安） |
| 规格书PDF |
