UPA603T 复合场效应管 -50V -100mA/-0.1A SOT-163/SOT23-6 marking/标记 JA
| 最大源漏极电压VdsDrain-Source Voltage | -50V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 16V |
| 最大漏极电流IdDrain Current | -100mA/-0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 60Ω@ VGS = -10V, ID = -10mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.5~-2.5V |
| 耗散功率PdPower Dissipation | 300mW/0.3W |
| Description & Applications | N-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The uPA602T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET circuits in package the same size as SC-59 • Complement to uPA603T • Automatic mounting supported |
| 描述与应用 | N沟道MOS FET（6-PIN2电路） 的uPA602T是一个小型的模具装置，设置有两个 MOS FET电路。它实现了高密度安装， 节省了安装成本。 特点 •两个MOS FET的电路包的大小相同 SC-59 •补充uPA603T的 •支持自动安装 |
| 规格书PDF |
