XP4313 NPN+PNP复合阻尼三极管 50V 0.1A R1=R2=47KΩ SOT-363/SC-88 标记BZ 用于开关/数字电路
| Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| Q1集电极连续输出电流IC Collector Current(IC) | 100MA/0.1A |
| Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| Q2集电极连续输出电流IC Collector Current(IC) | -0.1A/100MA |
| Q1基极输入电阻R1 Input Resistance(R1) | 47KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
| Q2基极输入电阻R1 Input Resistance(R1) | 47KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 | 80 / 80 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 | 150MHZ / 80MHZ |
| 耗散功率Pc Power Dissipation | 150MW/0.15W |
| Description & Applications |
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Two elements incorporated into one package.
(Transistors with built-in resistor)
UNR2213 (UN2213) + UNR2113 (UN2113)
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| 描述与应用 |
硅NPN型外延刨床晶体管(Tr1)
硅PNP型外延刨床晶体管(Tr2)
两个元素纳入一个包。
(晶体管内置电阻)
UNR2213 (UN2213) + UNR2113 (UN2113)
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| 规格书PDF |
