2SC5807 NPN三极管 50V 5A 150MHz 180~390 250mV/0.25V SOT-89 marking/标记 AR DC-DC转换器 功率放大
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流ICCollector Current(IC) | 5A |
截止频率fTTranstion Frequency(fT) | 150MHz |
直流电流增益hFEDC Current Gain(hFE) | 180~390 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率PcPower Dissipation | 500mW/0.5W |
Description & Applications | For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5807 is a silicon NPN epitaxial Transistor. It designed with high collector current and high collector dissipation. FEATURE ●High collector current IC=5A ●Small collector to Emitter saturation voltage VCE(sat)=0.25V TYP. (@IC=4A,IB=100mA) ●High collector dissipation PC=500mW APPLICATION For storobe ,DC/DC convertor,power amplify apprication |
描述与应用 | 低频放大应用 硅NPN外延型 说明 2SC5807 NPN外延硅晶体管。 它设计有高集电极电流和集电极耗散高。 特写 ●高集电极电流IC= 5A ●小集电极到发射极饱和电压 VCE(饱和)= 0.25V TYP。 (@ IC=4A,IB=100毫安) ●高集电极耗散PC=500MW 应用 对于storobe,DC/ DC转换器,功率放大apprication |
规格书PDF |