SI2333DS-T1 P沟道MOS场效应管 -20V -4.7A 0.031ohm SOT-23 marking/标记 E3 功率MOSFET
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -4.7A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.031Ω @-4.7A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4V-1.0V |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | FEATURES TrenchFET Power MOSFET |
| 描述与应用 | 功率MOSFET |
| 规格书PDF |
