MGF4953A MESFET-N沟道 -3V 15mA-60mA -0.1V -- -1.5V 2520 marking/标记 B3 高频应用/低噪声
| 最大源漏极电压VdsDrain-Source Voltage | -3V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -4V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 15mA-60mA |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.1V -- -1.5V |
| 耗散功率PdPower Dissipation | 50mW |
| Description & Applications | Super low noise GaAs HEMT C to K band low noise amplifiers and oscillators Low noise figure High associated gain |
| 描述与应用 | 超低噪音砷化镓 HEMT C到K波段低噪声放大器和振荡器 低噪声系数 高相关增益 |
| 规格书PDF |
