AM3457P P沟道场效应管 -30 -5A SOT-163/SOT23-6 marking/标记 577 快速开关 便携式计算
最大源漏极电压VdsDrain-Source Voltage | -30 |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | -5A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 75mΩ@ VGS = -4.5V,ID = -3.6A |
开启电压Vgs(th)Gate-Source Threshold Voltage | 1V |
耗散功率PdPower Dissipation | 2W |
Description & Applications | P-Channel 30-V (D-S) MOSFET Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Battery Powered Instruments • Portable Computing • Mobile Phones • GPS Units and Media Players |
描述与应用 | P沟道30-V(D-S)的MOSFET 特点: •低RDS(ON)的沟槽技术 •低热阻抗 •开关速度快 典型应用: •电池供电的仪器 •便携式计算 •手机 •GPS装置和媒体播放器 |
规格书PDF |