RN47A5 NPN+PNP复合带阻尼三极管 50V/-50V 100mA/-100mA 80/50 200mW/0.2W SOT-353/usv/SC70-5 标记25 开关电路 逆变器 接口电路 驱动电路
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
集电极连续输出电流IC Collector Current(IC) | 100mA/-100mA |
Q1基极输入电阻R1 Input Resistance(R1) | 47KΩ/Ohm |
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
Q2基极输入电阻R1 Input Resistance(R1) | 4.7KΩ/Ohm |
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.47 |
直流电流增益hFE DC Current Gain(hFE) | 80/50 |
截止频率fT Transtion Frequency(fT) | 250MHz/200MHz |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | Features • TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
描述与应用 | 特点 •东芝晶体管的硅NPN·PNP外延型的(PCT程序)(偏置电阻晶体管) •两个设备都纳入一个超超级迷你(5针)封装。 •将偏置电阻晶体管,减少了部件数量。减少零件数,使制造比以往更紧凑的设备和装配成本。 应用 •开关,逆变电路,接口电路和驱动器电路应用 |
规格书PDF |