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TPCP8402 复合场效应管 30V/-30V 4.2A/-3.4A PS-8 marking/标记 8402 电机驱动 DC/DC转换

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产品描述
最大源漏极电压VdsDrain-Source Voltage30V/-30V
最大栅源极电压Vgs(±)Gate-Source Voltage20V/-20V
最大漏极电流IdDrain Current4.2A/-3.4A
源漏极导通电阻RdsDrain-Source On-State Resistance50mΩ@ VGS = 10V, ID = 2100mA/ 72mΩ@ VGS = -10V, ID = -1700mA
开启电压Vgs(th)Gate-Source Threshold Voltage1.3~2.5V/-0.8~-2.0V
耗散功率PdPower Dissipation580mW/0.58W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications • Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.) N Channel |Yfs| = 7.0 S (typ.) • Low leakage current : P Channel IDSS = −10 μA (VDS = −30 V) N Channel IDSS = 10 μA (VDS = 30 V) • Enhancement−mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)
描述与应用东芝场效应晶体管的硅P,N沟道MOS型(U-MOS IV/ U-MOS III) 便携式设备的应用 应用MORTOR驱动 DC-DC转换器应用 •低漏源导通电阻 :P沟道的RDS(ON)= 60mΩ(典型值) N沟道的RDS(ON)=38mΩ(典型值) •高正向转移导纳 :P通道| YFS|=6.0 S(典型值) N沟道YFS|=7.0 S(典型值) •低漏电流 :P沟道IDSS=-10μA(VDS=-30 V) N沟道IDSS=10μA(VDS=30 V) •增强模式 :P沟道Vth= -0.8到-2.0 V(VDS= -10 V,ID=-1MA) N沟道Vth =1.3〜2.5 V(VDS=10V,ID=1毫安)
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