TPCF8104 P沟道MOS场效应管 -30V -6A 28毫欧 vs-8 marking/标记 F3D 便携式设备应用 低漏电流 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -6A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 28mΩ@ VGS = -10V, ID = -3A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.8~-2.0V |
| 耗散功率PdPower Dissipation | 2.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型（U-MOSⅣ） 笔记本电脑应用 便携式设备的应用 •低漏源导通电阻RDS（ON）= 21mΩ（典型值） •高正向转移导纳：| YFS|= 9.6 S（典型值） •低漏电流：IDSS= -10μA（最大）（VDS=-30 V） •增强模式：Vth= -0.8到-2.0 V （VDS=-10 V，ID=-1MA） |
| 规格书PDF |
