SI5480DU N沟道MOSFET 30V 12A 1206-8 marking/标记 ADH
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 12A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 13mΩ@ VGS = 10V, ID = 7.2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1V~3V |
| 耗散功率Pd Power Dissipation | 3.1W |
| Description & Applications | N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile APPLICATIONS • Load Switch, PA Switch, and Battery Switch for Portable Applications • DC-DC Synchronous Rectification |
| 描述与应用 | N沟道30-V（D-S）的MOSFET 特点 •TrenchFET功率MOSFET - 小占位面积 - 低导通电阻 应用 •负荷开关，PA开关，电池开关用于便携式应用 •DC-DC同步整流 |
| 规格书PDF |
