MUN5312DW1T NPN+PNP复合带阻尼三极管 -50V/50V -100mA/100mA 100 250mW/0.25W SOT-363/SC-88/SC70-6 标记12 开关电路 逆变器 接口电路 驱动电路
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V/50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V/50V |
集电极连续输出电流IC Collector Current(IC) | -100mA/100mA |
Q1基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22KΩ/Ohm |
Q1电阻比(R1/R2) Q1 Resistance Ratio | 1 |
Q2基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22KΩ/Ohm |
Q2电阻比(R1/R2) Q2 Resistance Ratio | 1 |
直流电流增益hFE DC Current Gain(hFE) | 100 |
截止频率fT Transtion Frequency(fT) | |
耗散功率Pc Power Dissipation | 250mW/0.25W |
Description & Applications | Features •Dual Bias Resistor Transistors •NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network •Simplifies Circuit Design •Reduces Board Space •Reduces Component Count •Available in 8 mm, 7 inch/3000 Unit Tape and Reel •These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
描述与应用 | 特点 •双偏置电阻晶体管 •NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 •简化电路设计 •缩小板级空间 •减少元件数 •8毫米,7 inch/3000单位带和卷轴 •这些器件是无铅,无卤/ BFR免费,并符合RoHS标准 |
规格书PDF |