TPCF8B01 复合场效应管MOSFET+肖特基二极管 -20V -2.7A 1A 0.46V 1206-8/vs-8 marking/标记 F8A 低漏源导通电阻/低漏电流/低正向电压
| 最大源漏极电压VdsDrain-Source Voltage | P沟道 P-Channel |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -20V |
| 最大漏极电流IdDrain Current | 8V |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | -2.7A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 110mΩ@ VGS = -4.5V, ID = -1.4mA |
| 耗散功率PdPower Dissipation | -0.5~-1.2V |
| Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
| 描述与应用 | 20V |
| 规格书PDF |
