SI1555DL-T1-GE3 复合场效应管 20V/-8V 660mA/-570mA SOT-363/SC70-6 marking/标记 RB
| 最大源漏极电压VdsDrain-Source Voltage | 20V/-8V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V/8V |
| 最大漏极电流IdDrain Current | 660mA/-570mA |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 630mΩ@ VGS =2.5V, ID =400mA/1.8Ω@ VGS =-2.5V, ID =-250mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.4V/-0.45~1V |
| 耗散功率PdPower Dissipation | 270mW/0.27W |
| Description & Applications | Complementary Low-Threshold MOSFET Pair |
| 描述与应用 | 低阈值MOSFET对互补 |
| 规格书PDF |
