SSM6K34TU N沟道MOSFET 30V 3A SOT-363/SC70-6/TSSOP6/SC-88/US6 marking/标记 KNC 低导通电阻/高速开关/低门槛/低栅极驱动器
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 3A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 77mΩ@ VGS = 4.5V, ID = 2A |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.3~2.5V |
耗散功率Pd Power Dissipation | 500mW/0.5W |
Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Current Switching Applications Power Management Switch Applications • 4.5Vdrive • Low on resistance: :Ron = 77 mΩ (max) (@VGS = 4.5 V) :Ron = 50 mΩ (max) (@VGS = 10 V) |
描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高电流开关应用 电源管理开关应用 •4.5Vdrive •低电阻:: RON =77MΩ(最大)(@ VGS= 4.5 V) :RON= 50MΩ(最大)(@ VGS=10 V) |
规格书PDF |