TPCL4203 N沟道MOSFET 24V 6A 4-Chip LGA marking/标记 高速开关/低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage | 24V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.036Ω/Ohm @3A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.2V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | Small, thin package Low source-source on-resistance: RSS(ON) = 27 mΩ (typ.) (VGS = 4.5 V) Low leakage current: ISSS = 10 µA (max) (VSS = 24 V) Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 µA) Common drain |
| 描述与应用 | 小型，薄型封装 低源源导通电阻：RSS（ON）= 27mΩ（典型值）（VGS=4.5 V） 低漏电流：ISSS=10μA（最大）（VSS=24V） 增强模式：VTH =0.5〜1.2 V（VSS= 10 V，IS=200μA）常见的漏 |
| 规格书PDF |
