SI7123DN-T1-GE3 P沟道MOS场效应管 -20V -16A 0.0086ohm Vth:-0.4V-1.0V 1212-8 marking/标记 7123 功率MOSFET 超低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -16A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.0086Ω @-5.2A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4V-1.0V |
| 耗散功率PdPower Dissipation | 3.8W |
| Description & Applications | FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated • Ultra-Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC |
| 描述与应用 | •根据IEC 61249-2-21的无卤素 定义 •的TrenchFET 功率MOSFET：1.5 V额定 •超低导通电阻 •100％的Rg 测试 •符合RoHS指令2002/95/EC |
| 规格书PDF |
