TPCP8510 NPN 180V 1A HEF=60~300 PS-8 代码 8510
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 180V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 120V |
集电极连续输出电流ICCollector Current(IC) | 1A |
截止频率fTTranstion Frequency(fT) | |
直流电流增益hFEDC Current Gain(hFE) | 60~300 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 0.14V |
耗散功率PcPower Dissipation | 1.1V |
Description & Applications | * TOSHIBA Transistor Silicon NPN Epitaxial Type. * High-Speed, High-Voltage Switching Applications * DC-DC Converter Applications * High DC current gain: hFE = 120 to 300 (IC = 0.1 A) * Low collector-emitter saturation: VCE (sat) = 0.14 V (max) * High-speed switching: t f = 0.2 μs (typ) |
描述与应用 | *东芝晶体管NPN硅外延型。 *高速,高电压开关应用 * DC-DC转换器应用 *高直流电流增益:HFE=120??300(IC= 0.1 A) *低集电极 - 发射极饱和:VCE(sat)= 0.14 V(最大值) *高速开关:T F=0.2微秒(典型值) |
规格书PDF |