HB60P20F P沟道场效应管 -21V -6.1A SOT23 1.5 - v驱动 低导通电阻
| 最大源漏极电压Vds Drain-Source Voltage |
-21V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
8V |
| 最大漏极电流Id Drain Current |
-6.1A |
| 源漏极导通电阻Rds Drain-Source On-State |
RDS(ON) = 88.4mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 56.0mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 39.7mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 29.8mΩ (max) (@VGS = -4.5 V)
|
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
|
| 耗散功率Pd Power dissipation |
1W |
| 描述与应用 Description & Applications |
开关电源管理应用程序
1.5 - v驱动
低导通电阻
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| 规格书PDF |
