NTD40N03RT4G N沟道场效应管 25V 45A TO252 代码 T40N03G 低栅极电荷
| 最大源漏极电压VdsDrain-Source Voltage | 25v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -25v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 45A |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | 1~2v |
| 耗散功率PdPower Dissipation | 1.5W |
| Description & Applications | •Power MOSFET •Low RDS(on) to Minimize Conduction Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters |
| 描述与应用 | •功率MOSFET •低的RDS（on）减少传导损耗 •低栅极电荷 •优化高效率的DC-DC转换器的高侧开关需求 |
| 规格书PDF |
