FDB7030BLS N沟道场效应管 30v 56A TO263AB 代码 FDB7030BL
| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | 20V |
| 漏极电流(Vgs=0V)IDSSDrain Current | 56A |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | |
| 耗散功率PdPower Dissipation | 65W |
| Description & Applications |
30V N-Channel PowerTrenchÒ SyncFET™
· Includes SyncFET Schottky body diode
· Low gate charge (15nC typical)
· High performance trench technology for extremely
low RDS(ON) and fast switching
· High power and current handling capability
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| 描述与应用 |
30 v n沟道PowerTrenchO SyncFET?
包括SyncFET·肖特基二极管
·低闸极电荷(15典型数控)
极·高性能沟技术
低RDS(上)和快速切换
·高功率和电流处理能力
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| 规格书PDF |
