| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Features • NPN Silicon Transistor • High current transition frequency fT=9.0 GHz(Typ.) @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA |
| 描述与应用 | 特点 •NPN硅晶体管 •高电流转换频率 FT =9.0千兆赫（典型值）@ VCE=6V，IC工作电流= 15mA •低噪声图 的NFmin=1.4分贝（典型值）的1.0 GHz，VCE =8V，IC=3毫安 •最大稳定增益（MSG）=19dB@1.0主频，VCE=6V，IC=10毫安 •输出三阶截取（IP3）输出=29dBm@1.0主频，VCE=6V，IC=10毫安 |