2SD2167 NPN三极管 31V 2A 100MHz 56~180 250mV/0.25V SOT-89/SC-62/MPT3 marking/标记 DLP 功率晶体管
| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 31V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 31V |
| 集电极连续输出电流ICCollector Current(IC) | 2A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 56~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 250mV/0.25V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | *Power Transistor *features *Built-in zener diode between collector and base. *Zener diode has low voltage dispersion. *Strong protection against reverse power surges due to low loads. PC=2 W (on 40×40×0.7mm ceramic board) |
| 描述与应用 | *功率晶体管 特点 *内置的集电极和基极之间的齐纳二极管。 *齐纳二极管具有低电压分散。 *强逆功率保护潮 低负荷。 PC=2 W（40×40×0.7毫米的陶瓷板） |
| 规格书PDF |
