2SJ530STL P沟道MOS场效应管 -60V -15A 0.08ohm SOT-252 marking/标记 J530 高速开关
| 最大源漏极电压VdsDrain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -15A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.08Ω @-8A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--2.0V |
| 耗散功率PdPower Dissipation | 30W |
| Description & Applications | Features •Low on-resistance RDS(on)= 0.08Ω typ. •4V gate drive devices. •High speed switching. |
| 描述与应用 | •低导通电阻 RDS（ON）=0.08Ω（典型值）。 •4V栅极驱动装置。 •高速开关 |
| 规格书PDF |
