2SJ559 P沟道MOS场效应管 -30V 100mA/0.1A 0.006ohm SOT-523 marking/标记 C1 2.5V驱动 低栅极截止电压
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.006Ω @-10mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--1.7V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | FEATURES • Can be driven by a 2.5 V power source. • Low gate cut-off voltage. |
| 描述与应用 | •可以由一个2.5 V电源。 •低栅极截止电压 |
| 规格书PDF |
