2SK1103-P N沟道结型场效应管 65v 0.6~1.5mA SOT-23 marking/标记 4LP 开关
| 最大源漏极电压VdsDrain-Source Voltage | 65v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -65v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.6~1.5ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -1.5v |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | •Silicon N-Channel Junction FET •For switching •Low ON-resistance •Low-noise characteristics |
| 描述与应用 | •硅N沟道结型场效应管 •对于开关 •低导通电阻 •低噪声特性 |
| 规格书PDF |
