2SK1103-P N沟道结型场效应管 65v 0.6~1.5mA SOT-23 marking/标记 4LP 开关
最大源漏极电压VdsDrain-Source Voltage | 65v |
栅源极击穿电压V(BR)GSGate-Source Voltage | -65v |
漏极电流(Vgs=0V)IDSSDrain Current | 0.6~1.5ma |
关断电压Vgs(off)Gate-Source Cut-off Voltage | -1.5v |
耗散功率PdPower Dissipation | 150mW/0.15W |
Description & Applications | •Silicon N-Channel Junction FET •For switching •Low ON-resistance •Low-noise characteristics |
描述与应用 | •硅N沟道结型场效应管 •对于开关 •低导通电阻 •低噪声特性 |
规格书PDF |