2SK1332 N沟道结型场效应管 30v 0.2~0.45mA SOT-323 marking/标记 V3 高正向转移导纳
最大源漏极电压VdsDrain-Source Voltage | 30v |
栅源极击穿电压V(BR)GSGate-Source Voltage | -30v |
漏极电流(Vgs=0V)IDSSDrain Current | 0.2~0.45ma |
关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.1~1v |
耗散功率PdPower Dissipation | 80mw |
Description & Applications | •N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR •Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S |
描述与应用 | •N沟道硅结型场效应晶体管 •小型封装 •高正向转移导纳 1000μs典型值。 (IDSS= 100μA) 1600μs典型值。 (IDSS= 200μA) •包括二极管和高阻力在G - S |
规格书PDF |