2SK2177 N沟道MOSFET 500V 3A TO-252/D-PAK marking/标记 K2177 输入电容小
| 最大源漏极电压Vds Drain-Source Voltage | 500V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 5.8Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.5-3.5V |
| 耗散功率Pd Power Dissipation | 10W |
| Description & Applications | Features N-CHANNEL ENHANCEMENT MODE Input capacitance is small,especially,input capacitance at 0 biass is small The static Rds(on) is small The switching time is fast |
| 描述与应用 | 特性 N沟道增强模式 尤其是，输入电容小，输入在0 预偏电阻电容小 静态的Rds（on）很小 开关时间快 |
| 规格书PDF |
