2SK3320-GR N沟道结型场效应管 50v 2.6~6.5mA SOT-353 marking/标记 XG 低噪声 radio 放大器
| 最大源漏极电压VdsDrain-Source Voltage | 50v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -50v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 2.6~6.5ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.37~-1v |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | •Silicon N-Channel Junction FET FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS |
| 描述与应用 | •硅N沟道结型场效应管 低噪声音频放大器应用 |
| 规格书PDF |
