3SK296ZQ-TL-E N沟道MOSFET 12V 25mA SOT-343/CMPAK-4 marking/标记 ZQ 低噪声增益控制放大器/低电压操作
| 最大源漏极电压Vds Drain-Source Voltage | 12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 25mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.5-0.5/0-1V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon N-Channel Dual Gate MOS FET UHF RF amplifier Features •Low noise figure. NF = 2.0 dB typ. at f = 900 MHz •Capable of low voltage operation |
| 描述与应用 | 硅N沟道双栅MOS FET UHF RF放大器 •低噪声系数。 NF= 2.0 dB（典型值）在f =900 MHz的 •能够低电压操作 |
| 规格书PDF |
