3SK298 N沟道MOSFET 12V 25mA SOT-343/CMPAK-4/SC70-4 marking/标记 ZP 低噪声增益控制放大器/低电压操作
| 最大源漏极电压Vds Drain-Source Voltage | 12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 25mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0-1.0V |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | Silicon N-Channel Dual Gate MOS FET UHF / VHF RF amplifier Features •Low noise figure. NF = 2.0 dB typ. at f = 900 MHz •Capable of low voltage operation |
| 描述与应用 | •低噪声系数。 NF= 2.0 dB（典型值）在f =900 MHz的 •能够低电压操作 |
| 规格书PDF |
