AO6704L 复合场效应管MOSFET+肖特基二极管 30V 3.6A 1.5A 0.39V SOT-163/SOT23-6/TSOP6 marking/标记 G4D DC-DC转换器/低栅极电荷
最大源漏极电压VdsDrain-Source Voltage | N沟道 N-Channel |
最大栅源极电压Vgs(±)Gate-Source Voltage | 30V |
最大漏极电流IdDrain Current | 12V |
源漏极导通电阻RdsDrain-Source On-State Resistance | 3.6A |
开启电压Vgs(th)Gate-Source Threshold Voltage | 65mΩ@ VGS = 10V, ID = 3.6A |
耗散功率PdPower Dissipation | 1~1.8V |
Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
描述与应用 | 20V |
规格书PDF |