BSH103 N沟道MOSFET 30V 850mA/0.85A SOT-23/SC-59 marking/标记 J3 低噪声增益控制放大器
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 850mA/0.85A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.4Ω/Ohm @500mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | DMOS Transistor (N-Channel) FEATURES • Very low threshold • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. |
| 描述与应用 | DMOS晶体管（N沟道） •非常低门槛 •高速开关 •无二次击穿 •直接连接到C-MOS，TTL |
| 规格书PDF |
