BSP171P P沟道MOS场效应管 -60V -1.9A 0.21ohm SOT-223 marking/标记 BSP171P
| 最大源漏极电压VdsDrain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -1.9A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.21Ω @-1.9A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1--2V |
| 耗散功率PdPower Dissipation | 1.8W |
| Description & Applications | Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • dv /dt rated |
| 描述与应用 | •P沟道 •增强模式 •逻辑电平 •额定雪崩 •dv / dt的额定 |
| 规格书PDF |
