BSP206 P沟道MOS场效应管 -60V -359mA 6ohm SOT-223 marking/标记 高速开关 无二次击穿
| 最大源漏极电压VdsDrain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -60V |
| 最大漏极电流IdDrain Current | -0.359A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 6Ω @-200mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.5--3.5V |
| 耗散功率PdPower Dissipation | 1.5W |
| Description & Applications | FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL, • High-speed switching • No secondary breakdown |
| 描述与应用 | •非常低的RDS（on） •直接连接C-MOS，TTL， •高速开关 •无二次击穿 |
| 规格书PDF |
