BSS284 P沟道MOS场效应管 -50V -130mA 5ohm SOT-23 marking/标记 SD
最大源漏极电压VdsDrain-Source Voltage | -50V |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | -0.13A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 5Ω @-130mA,-10V |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.8--1.8V |
耗散功率PdPower Dissipation | 360mW/0.36W |
Description & Applications | SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th)= -0.8...-1.6 V |
描述与应用 | SIPMOS®小信号晶体管 •P沟道 •增强模式 •逻辑电平 •VGS(TH)=-0.8...-1.6 V |
规格书PDF |